1/f noise in proton-irradiated SiGeHBTs

被引：25
|
作者：
Jin, ZR [1 ]
Niu, GF
Cressler, JD
Marshall, CJ
Marshall, PW
Kim, HS
Reed, RA
Harame, DL
机构：
[1] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA
[2] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA
[3] Jackson & Tull Chartered Engineers, Washington, DC 20018 USA
[4] IBM Microelect, Essex Jct, VT 05401 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2001年 / 48卷 / 06期
关键词：
1/f noise; proton irradiation; SiGe heterojunction bipolar transistor (HBT);
D O I：
10.1109/23.983203
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper investigates the impact of proton irradiation on the 1/f noise in ultra-high-voltage chemical-vapor deposition SiGe heterojunction bipolar transistors. The relative degradation of 1/f noise shows a strong dependence on device geometry. Both the geometry dependence and the bias dependence of 1/f noise change significantly after exposure to 2 x 10(13) p/cm(2) protons. An expression describing the 1/f noise is derived and used to explain the experimental observations.
引用
收藏
页码：2244 / 2249
页数：6
相关论文
共 50 条
  • [31] Measurements of charge transfer ef f iciency in a proton-irradiated swept charge device
    王于仨
    杨彦佶
    陈勇
    刘晓艳
    崔苇苇
    徐玉朋
    李成奎
    李茂顺
    韩大炜
    陈田祥
    霍嘉
    王娟
    李炜
    胡渭
    张艺
    陆波
    尹国和
    朱玥
    张子良
    Chinese Physics C, 2014, (06) : 46 - 50
  • [32] Measurements of charge transfer ef f iciency in a proton-irradiated swept charge device
    王于仨
    杨彦佶
    陈勇
    刘晓艳
    崔苇苇
    徐玉朋
    李成奎
    李茂顺
    韩大炜
    陈田祥
    霍嘉
    王娟
    李炜
    胡渭
    张艺
    陆波
    尹国和
    朱玥
    张子良
    Chinese Physics C, 2014, 38 (06) : 46 - 50
  • [33] Luminescence kinetics in proton-irradiated quartz glasses
    P. V. Demenkov
    O. A. Plaksin
    V. A. Stepanov
    P. A. Stepanov
    V. M. Chernov
    Technical Physics Letters, 2000, 26 : 475 - 477
  • [34] MECHANISM OF DIVACANCY ANNEALING IN PROTON-IRRADIATED SILICON
    BERMAN, LS
    VORONKOV, VB
    KOZLOV, VA
    REMENYUK, AD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (08): : 847 - 848
  • [35] Deformation microstructure of proton-irradiated stainless steels
    Jiao, Z.
    Busby, J. T.
    Was, G. S.
    JOURNAL OF NUCLEAR MATERIALS, 2007, 361 (2-3) : 218 - 227
  • [36] POSITRON ANNIHILATION IN PROTON-IRRADIATED AND GAMMA-IRRADIATED SODIUMCHLORIDE CRYSTALS
    ACHE, HJ
    WILLIAMS, TL
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1969, (SEP): : NU15 - &
  • [37] Vacancy-type defects in proton-irradiated InAs
    Puff, W
    Balogh, AG
    POSITRON ANNIHILATION - ICPA-12, 2001, 363-3 : 73 - 75
  • [38] SUPERCONDUCTIVITY OF PROTON-IRRADIATED V3SI
    ALTEROVITZ, SA
    FARRELL, DE
    CHANDRASEKHAR, BS
    HAUGLAND, EJ
    BLUE, JW
    LIU, DC
    PHYSICAL REVIEW B, 1981, 24 (01) : 90 - 95
  • [39] EVOLUTION OF HYDROGEN FROM PROTON-IRRADIATED CONSTRUCTION MATERIALS
    VASIN, YP
    ZALUZHNYI, AG
    SKOROV, DM
    STOROZHUK, OM
    SOVIET ATOMIC ENERGY, 1975, 39 (04): : 919 - 920
  • [40] SEPARATION OF RADIOTELLURIUM FROM PROTON-IRRADIATED ANTIMONY TARGETS
    MILLER, DA
    SUN, SJ
    SMITHBAUER, S
    RADIOCHIMICA ACTA, 1993, 60 (2-3) : 69 - 73
12345