1/f noise in proton-irradiated SiGeHBTs

被引：25

作者：

Jin, ZR ^{[1
]}

Niu, GF

Cressler, JD

Marshall, CJ

Marshall, PW

Kim, HS

Reed, RA

Harame, DL

机构：

[1] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA

[2] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[3] Jackson & Tull Chartered Engineers, Washington, DC 20018 USA

[4] IBM Microelect, Essex Jct, VT 05401 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2001年 / 48卷 / 06期

关键词：

1/f noise; proton irradiation; SiGe heterojunction bipolar transistor (HBT);

D O I：

10.1109/23.983203

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the impact of proton irradiation on the 1/f noise in ultra-high-voltage chemical-vapor deposition SiGe heterojunction bipolar transistors. The relative degradation of 1/f noise shows a strong dependence on device geometry. Both the geometry dependence and the bias dependence of 1/f noise change significantly after exposure to 2 x 10(13) p/cm(2) protons. An expression describing the 1/f noise is derived and used to explain the experimental observations.

引用

页码：2244 / 2249

页数：6

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