Properties of diamond-like carbon films prepared by high power pulsed sputtering with two facing targets
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作者:
Kimura, Takashi
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Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Gokiso Cho, Nagoya, Aichi 4668555, JapanNagoya Inst Technol, Grad Sch Engn, Showa Ku, Gokiso Cho, Nagoya, Aichi 4668555, Japan
Kimura, Takashi
[1
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Mishima, Toshihiko
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Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Gokiso Cho, Nagoya, Aichi 4668555, JapanNagoya Inst Technol, Grad Sch Engn, Showa Ku, Gokiso Cho, Nagoya, Aichi 4668555, Japan
Mishima, Toshihiko
[1
]
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Azuma, Kingo
[2
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Nakao, Setsuo
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Natl Inst Adv Ind Sci & Technol AIST Chubu, Moriyama Ku, 2266-98 Anagahora, Nagoya, Aichi 4638560, JapanNagoya Inst Technol, Grad Sch Engn, Showa Ku, Gokiso Cho, Nagoya, Aichi 4668555, Japan
Nakao, Setsuo
[3
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机构:
[1] Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Gokiso Cho, Nagoya, Aichi 4668555, Japan
[2] Univ Hyogo, Dept Elect Mat & Engn, 2167 Shosha, Himeji, Hyogo 6712280, Japan
[3] Natl Inst Adv Ind Sci & Technol AIST Chubu, Moriyama Ku, 2266-98 Anagahora, Nagoya, Aichi 4638560, Japan
Diamond-like carbon films are prepared by high power pulsed sputtering with a configuration of two facing targets. The discharge is called Penning discharge. Peak value of instantaneous power which is consumed in the plasma confined in a compact space reaches more than 10 kW in spite of an average power of 36-38 W. Growth rate is around 0.16-0.21 mu m per hour in the pressure range from 0.5 to 2 Pa. In the Raman spectra, two very broad overlapping bands extending between 1200 and 1700 cm(-1) are assigned as the D (disorder) and G (graphite) bands. Both the intensity ratio of D band to G band and the G peak position do not strongly depend on the pressure at the pressure less than 1 Pa, beyond which the G peak position somewhat shifts to higher wavenumber and the intensity ratio increases. Meanwhile, the full width at half maximum of the G peak monotonically decreases with increasing pressure. In XPS Cis core level spectra, the rate of sp(3) C bond related area is about 43-44% at the pressure lower than 1 Pa, beyond which the rate gradually decreases to about 38% with increasing pressure up to 2 Pa. The pressure dependence on the rate of sp(3) C bond is reasonably consistent with the analysis of the Raman parameters. The hardness of films exceeds 25 GPa at the pressure less than 1 Pa, whereas the films with a moderate hardness of about 16.5 GPa are prepared at the pressure higher than 1 Pa. (C) 2016 Elsevier B.V. All rights reserved.
机构:
Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, ChinaResearch Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
Wang, Xuemin
Wu, Weidong
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Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, ChinaResearch Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
Wu, Weidong
Li, Shengyin
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机构:
Sichuan University, Chengdu 610065, ChinaResearch Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
Li, Shengyin
Chen, Songlin
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Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, ChinaResearch Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
Chen, Songlin
Tang, Yongjian
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Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, ChinaResearch Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
Tang, Yongjian
Bai, Li
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Sichuan University, Chengdu 610065, ChinaResearch Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
Bai, Li
Wang, Haiping
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Sichuan University, Chengdu 610065, ChinaResearch Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
Wang, Haiping
Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering,
2010,
39
(07):
: 1251
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1255
机构:
Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150006, Peoples R China
Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen, Peoples R ChinaHarbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150006, Peoples R China
Wu, Zhongzhen
Tian, Xiubo
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Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150006, Peoples R ChinaHarbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150006, Peoples R China
Tian, Xiubo
Gui, Gang
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Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150006, Peoples R ChinaHarbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150006, Peoples R China
Gui, Gang
Gong, Chunzhi
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Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150006, Peoples R ChinaHarbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150006, Peoples R China
Gong, Chunzhi
Yang, Shiqin
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Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150006, Peoples R ChinaHarbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150006, Peoples R China
Yang, Shiqin
Chu, Paul K.
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机构:
City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R ChinaHarbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150006, Peoples R China