Plasmon-Phonon Interactions in Topological Insulator Microrings

被引:68
|
作者
Autore, Marta [1 ,2 ]
D'Apuzzo, Fausto [1 ,3 ]
Di Gaspare, Alessandra [4 ,5 ]
Giliberti, Valeria [1 ,4 ]
Limaj, Odeta [1 ,2 ]
Roy, Pascale [6 ]
Brahlek, Matthew [7 ]
Koirala, Nikesh [7 ]
Oh, Seongshik [7 ]
Garcia de Abajo, Francisco Javier [8 ]
Lupi, Stefano [1 ,2 ]
机构
[1] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy
[2] Ist Nazl Fis Nucl, Sez Roma 1, I-00185 Rome, Italy
[3] Ist Italiano Tecnol Sapienza, I-00161 Rome, Italy
[4] CNR, Ist Foton & Nanotecnol, I-00156 Rome, Italy
[5] Ist Nazl Fis Nucl, Lab Nazl Frascati, I-00044 Frascati, Italy
[6] Synchrotron Soleil, F-91192 Gif Sur Yvette, France
[7] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[8] ICFO Inst Ciencies Foton, Barcelona 08860, Spain
来源
ADVANCED OPTICAL MATERIALS | 2015年 / 3卷 / 09期
基金
美国国家科学基金会;
关键词
GRAPHENE PLASMONICS; INFRARED BEAMLINE; DIRAC PLASMONS; GOLD; SURFACE; NANOPARTICLES; HYBRIDIZATION; RESONANCE; DYNAMICS; SHAPE;
D O I
10.1002/adom.201400513
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The great potential of Dirac electrons for plasmonics and photonics has been readily recognized after their discovery in graphene, followed by applications to smart optical devices. Dirac carriers are also found in topological insulators (TIs)-quantum systems having an insulating gap in the bulk and intrinsic Dirac metallic states at the surface. Here, the plasmonic response of ring structures patterned in Bi2Se3 TI films is investigated through terahertz (THz) spectroscopy. The rings are observed to exhibit a bonding and an antibonding plasmon modes, which we tune in frequency by varying their diameter. An analytical theory based on the THz conductance of unpatterned films is developed, which accurately describes the strong plasmon-phonon hybridization and Fano interference experimentally observed as the bonding plasmon is swiped across the prominent 2 THz phonon exhibited by this material. This work opens the road for the investigation of plasmons in topological insulators and for their application in tunable THz devices.
引用
收藏
页码:1257 / 1263
页数:7
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