Reflow processes in micro-bumps studied by synchrotron X-ray projection nanotomography

被引：13
|
作者：
Bertheau, J. [1 ,2 ]
Bleuet, P. [2 ]
Hodaj, F. [3 ]
Cloetens, P. [4 ]
Martin, N. [1 ,2 ]
Charbonnier, J. [2 ]
Hotellier, N. [1 ]
机构：
[1] ST Microelect, Crolles, France
[2] CEA Grenoble, LETI, F-38054 Grenoble, France
[3] Grenobe INP UJF, SIMAP, Grenoble, France
[4] European Synchrotron Radiat Facil, F-38043 Grenoble, France
来源：
MICROELECTRONIC ENGINEERING | 2014年 / 113卷
关键词：
Micro-bumps; Nanotomography; SnAgCu solder; Interfacial reaction; Intermetallics; SN-AG-CU; INTERFACIAL REACTIONS;
D O I：
10.1016/j.mee.2013.07.013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In microelectronics, the trend to lower the device dimensions forces to adapt the characterization tools. Here, we report a 3D characterization study of SnAgCu alloys in micro-bumps (mu-bumps) used for flip chip packaging, with bumps diameters as small as 25 mu m. Such a study of thick, bulk samples requires penetrating radiation and consequently hard X-rays provided by synchrotron radiation have been used in a specific tomographic scheme. The intermetallics compounds (IMCs) growing at the copper/SnAgCu alloy interface are revealed at different reflow conditions by using holography coupled to X-ray projection nanotomography. This characterization method for such a system as mu-bumps allows here to render and measure the volume of IMC depending of the heat treatment conditions. At the same time, the influence of the bump size on the mu-bumps microstructure was studied by using copper pillars of different diameter.(C) 2013 Published by Elsevier B.V.
引用
收藏
页码：123 / 129
页数：7
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