High performance low voltage organic field effect transistors on plastic substrate for amplifier circuits

被引:3
|
作者
Houin, G. [1 ,2 ]
Duez, F. [2 ]
Garcia, L. [2 ]
Cantatore, E. [3 ]
Torricelli, F. [4 ]
Hirsch, L. [1 ]
Belot, D. [2 ]
Pellet, C. [1 ]
Abbas, M. [1 ]
机构
[1] Univ Bordeaux, CNRS, Lab IMS, UMR 5218, F-33607 Pessac, France
[2] ST Microelect, 850 Rue Jean Monnet, F-38920 Crolles, France
[3] Eindhoven Univ Technol, NL-5612 AJ Eindhoven, Netherlands
[4] Univ Brescia, Dept Informat Engn, Via Branze 38, I-25123 Brescia, Italy
来源
ORGANIC FIELD-EFFECT TRANSISTORS XV | 2016年 / 9943卷
关键词
organic field effect transistors; plastic substrate; parameter extraction; flexible amplifier; DESIGN;
D O I
10.1117/12.2238792
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The high performance air stable organic semiconductor small molecule dinaphtho[2,3-b: 2', 3'-f] thieno[3,2-b] thiophene (DNTT) was chosen as active layer for field effect transistors built to realize flexible amplifier circuits. Initial device on rigid Si/SiO2 substrate showed appreciable performance with hysteresis-free characteristics. A number of approaches were applied to simplify the process, improve device performance and decrease the operating voltage: they include an oxide interfacial layer to decrease contact resistance; a polymer passivation layer to optimize semiconductor/dielectric interface and an anodized high-k oxide as dielectric layer for low voltage operation. The devices fabricated on plastic substrate yielded excellent electrical characteristics, showing mobility of 1.6 cm(2)/Vs, lack of hysteresis, operation below 5 V and on/off current ratio above 10(5). An OFET model based on variable ranging hopping theory was used to extract the relevant parameters from the transfer and output characteristics, which enabled us to simulate our devices achieving reasonable agreement with the measurements
引用
收藏
页数:9
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