Nanocrystal-enhanced near-IR emission in the bismuth-doped chalcogenide glasses

被引：14
|
作者：
Xu, Yinsheng [1 ,2 ]
Qi, Jiani [1 ,2 ]
Lin, Changgui [1 ,2 ]
Zhang, Peiqing [2 ,3 ]
Dai, Shixun [2 ,3 ]
机构：
[1] Ningbo Univ, Fac Mat Sci & Chem Engn, Ningbo 315211, Zhejiang, Peoples R China
[2] Ningbo Univ, Lab Infrared Mat & Devices, Ningbo 315211, Zhejiang, Peoples R China
[3] Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China
来源：
CHINESE OPTICS LETTERS | 2013年 / 11卷 / 04期
基金：
中国国家自然科学基金;
关键词：
BAND INFRARED LUMINESCENCE; CODOPED CHALCOHALIDE GLASSES; FIBER LASERS; NM;
D O I：
10.3788/COL201311.041601
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Bismuth (Bi)-doped materials have attracted a great deal of attention because of their broadband near-infrared (near-IR) emission around the wavelength utilized in telecommunications. In this study, broad near-IR emission band from 1 100 to 1 650 nm is generated in the Bi-doped 90GeS(2)-10Ga(2)S(3) glass and glass-ceramics under 820 nm of light excitation. Based on the analysis of the absorption and emission spectra, the origin of this broadband emission is ascribed to the Bi-2(2-) dimers. The precipitation of beta-GeS2 nanocrystals drastically enhances the emission intensity and lifetime of Bi-doped chalcogenide glass.
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页数：4
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