EKV-based nonlinear analytical model for the MRC circuit

被引：2
|
作者：
Vidal, E
Martínez, H
Porta, S
Poveda, A
机构：
[1] Univ Politecn Cataluna, ETSETB, Dept Ingn Elect, ES-08034 Barcelona, Spain
[2] Univ Publ Navarra, Dept Ingn Elect & Elect, Pamplona 31006, Spain
来源：
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2002年 / 31卷 / 01期
关键词：
CMOS analogue integrated circuits; integrated circuits design;
D O I：
10.1023/A:1014480906985
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Strong differences are detected between the ideal and the actual behaviour of the resistance implemented by an MRC cell. An attempt to deal with these deviations reveals the inadequacy of the widely used BSIM MOSFET model, due to its lack of symmetry when modelling the carrier mobility dependence on the gate voltage. Using instead the EKV model, a nonlinear analytical description for the MRC is presented, rendering a much better estimation of the MRC resistance.
引用
收藏
页码：69 / 72
页数：4
相关论文
共 50 条
  • [1] EKV-Based Nonlinear Analytical Model for the MRC Circuit
    Eva Vidal
    Herminio Martínez
    Sonia Porta
    Alberto Poveda
    Analog Integrated Circuits and Signal Processing, 2002, 31 : 69 - 72
  • [2] Nonlinear analytical model of the MRC (MOS resistive circuit)
    Vidal, E
    Martínez, H
    Alarcón, E
    Poveda, A
    42ND MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, PROCEEDINGS, VOLS 1 AND 2, 1999, : 1122 - 1125
  • [3] An EKV-based high voltage MOSFET model with improved mobility and drift model
    Chauhan, Yogesh Singh
    Gillon, Renaud
    Bakeroot, Benoit
    Krummenacher, Francois
    Declercq, Michel
    Ionescu, Adrian Mihai
    SOLID-STATE ELECTRONICS, 2007, 51 (11-12) : 1581 - 1588
  • [4] A Smooth EKV-Based DC Model for Accurate Simulation of Printed Transistors and Their Process Variations
    Rasheed, Farhan
    Golanbari, Mohammad Saber
    Marques, Gabriel Cadilha
    Tahoori, Mehdi B.
    Aghassi-Hagmann, Jasmin
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (02) : 667 - 673
  • [5] Complete nonlinear model for the MRC (MOS Resistive Circuit)
    Vidal, E
    Porta, S
    Martínez, H
    Alarcón, E
    Poveda, A
    ISCAS 2000: IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - PROCEEDINGS, VOL I: EMERGING TECHNOLOGIES FOR THE 21ST CENTURY, 2000, : 140 - 143
  • [6] An analytical circuit based nonlinear thermal model for capacitor banks
    Wang, Haoran
    Wang, Huai
    MICROELECTRONICS RELIABILITY, 2018, 88-90 : 524 - 527
  • [7] Analytical nonlinear HEMT model for large signal circuit simulation
    Tanimoto, T
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1996, 44 (09) : 1584 - 1586
  • [8] Accurate MOS modelling for analog circuit simulation using the EKV model
    Bucher, M
    Lallement, C
    Enz, C
    Krummenacher, F
    ISCAS 96: 1996 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - CIRCUITS AND SYSTEMS CONNECTING THE WORLD, VOL 4, 1996, : 703 - 706
  • [9] Analytical approximate solutions for a general nonlinear resistor-nonlinear capacitor circuit model
    Fatoorehchi, Hooman
    Abolghasemi, Hossein
    Zarghami, Reza
    APPLIED MATHEMATICAL MODELLING, 2015, 39 (19) : 6021 - 6031
  • [10] Optimum analytical approach to nonlinear circuit analysis
    Yagoub, MCE
    Baudrand, H
    INTERNATIONAL JOURNAL OF MICROWAVE AND MILLIMETER-WAVE COMPUTER-AIDED ENGINEERING, 1996, 6 (04): : 281 - 287
12345