Hafnium oxide passivation of InGaAs/InP heterostructure bipolar transistors by electron beam evaporation

被引：3
|
作者：
Driad, R. [1 ]
Schmidt, R. [1 ]
Kirste, L. [1 ]
Loesch, R. [1 ]
Mikulla, M. [1 ]
Ambacher, O. [1 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2 | 2012年 / 9卷 / 02期
关键词：
passivation; hafnium oxide; heterostructure bipolar transistors; electron beam evaporation; ATOMIC LAYER DEPOSITION; ULTRATHIN HFO2 FILMS; SURFACE PASSIVATION; OPTICAL-PROPERTIES; GATE DIELECTRICS; STABILITY; SILICON;
D O I：
10.1002/pssc.201100228
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this contribution, we investigate the passivation of InGaAs/InP heterostructures using plasma assisted e-beam evaporated hafnium oxide (HfO2). The microstructure and optical properties of the HfO2 layers are first examined by X-ray reflectivity and spectroscopic ellipsometry on Si substrates. The current gain and breakdown voltage of InGaAs/InP heterostructure bipolar transistors (HBTs) have subsequently been used to evaluate the impact and efficiency of the e-beam evaporated HfO2 passivation layers. The results from these structures have been contrasted with data from similar samples encapsulated with SiO2 using conventional plasma enhanced chemical vapor deposition. The HfO2 passivated InGaAs/InP HBTs show comparable current gains as compared to unpassivated structures. More importantly, in contrast to SiO2-PECVD devices, the common emitter characteristics of HfO2 passivated HBTs show no degradation in device breakdown voltage. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页数：4
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