Circuit techniques for ultra-low power subthreshold SRAMs

被引：16
|
作者：
Kim, Tae-Hyoung [1 ]
Liu, Jason [1 ]
Keane, John [1 ]
Kim, Chris H. [1 ]
机构：
[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA
来源：
PROCEEDINGS OF 2008 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-10 | 2008年
关键词：
D O I：
10.1109/ISCAS.2008.4541982
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Subthreshold operation has become an important area in applications where minimal power consumption and energy efficiency are the critical constraints. In particular, ultra-low power SRAM designs are critical for implementing such applications due to the large portion of the systems that they account for. However, sub-threshold SRAMs have many design issues such as cell stability, readability, and writability. In this paper, we give an overview of sub-threshold SRAM design issues and discuss several circuit techniques. We will focus on SRAM cell stability during read and write operation, improved writability, and read port circuits for the design of an ultra-low power sub-threshold SRAMs.
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页码：2574 / 2577
页数：4
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