Enhancement of magneto-conductance in n-Si/n-PS/NPB structures at room temperature

被引：3

作者：

Radaoui, M. ^{[1
]}

Ben Fredj, A. ^{[1
]}

Romdhane, S. ^{[1
,2
]}

Bouaicha, M. ^{[3
]}

Bouchriha, H. ^{[1
]}

机构：

[1] Univ El Manar, Fac Sci Tunis, Lab Mat Avances & Phenomenes Quant, Tunis, Tunisia

[2] Univ Carthage, Fac Sci Bizerte, Zarzouna 7021, Bizerte, Tunisia

[3] Ctr Rech & Technol Energie, Lab Photovolta, Hammam Lif 2050, Tunisia

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2013年 / 178卷 / 20期

关键词：

Porous Silicon; Hybrid heterostructures; Organic conductors; Magneto-conductance; Double Schottky diode; ORGANIC SEMICONDUCTORS; SILICON STRUCTURES; POROUS SILICON; MAGNETORESISTANCE; DEVICES;

D O I：

10.1016/j.mseb.2013.08.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hybrid organic-inorganic semiconductor heterojunction with a sandwich structure have been prepared and studied. The inorganic semiconductor is n-type Porous Silicon (n-PS) elaborated on n-type crystalline silicon, the used conjugated polymer is the N,N'-diphenyl-N,N'-bis(1-naphthyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine (NPB). Current-voltage (I-V) at transverse static magnetic field effect was used to study the electrical properties of the devices at room temperature. The electrical parameters such as the ideality factor 'n', the barrier height and the series resistance are determined from the I-V curve. We report the observed magneto-conductance (MC) in a weak magnetic field. The observed positive MC was enhanced when we partially filled pores with the NPB. This effect reaches up to 4.7% at a magnetic field of 0.8 T. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：1416 / 1421

页数：6

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