MRAM: Enabling a Sustainable Device for Pervasive System Architectures and Applications

被引：0

作者：

Kang, S. H. ^{[1
]}

Park, C. ^{[1
]}

机构：

[1] Qualcomm Technol Inc, Corp Res & Dev, San Diego, CA 92121 USA

来源：

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MRAM, specifically, perpendicular spin-transfertorque (STT) MRAM, has reached a stage to serve early adopters. With its unique attributes and tunability, MRAM can create desirable system differentiations which were not possible due to inherent limitations of various memories. MRAM is poised for a unified memory subsystem that can revamp the architectures of emerging ultra-low-energy systems such as Internet-of-Things (IOT) and wearable devices. Furthermore, MRAM has a potential to transform computing-centric architectures at more advanced nodes.

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页数：4

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