Relaxed silicon-germanium on insulator substrate by layer transfer

被引：15

作者：

Cheng, ZY ^{[1
]}

Taraschi, G

Currie, MT

Leitz, CW

Lee, ML

Pitera, A

Langdo, TA

Hoyt, JL

Antoniadis, DA

Fitzgerald, EA

机构：

[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 12期

关键词：

relaxed Si1-xGex-on-insulator; UHVCVD; graded buffer; bonding; smart-cut;

D O I：

10.1007/s11664-001-0182-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of 4 in. relaxed Si1-xGex-on-insulator (SGOI) substrates by layer transfer was demonstrated. A high-quality relaxed Si1-xGex layer was grown using ultrahigh vacuum chemical vapor deposition (UHVCVD) on 4 in. Si donor wafers. Thin Si1-xGex film (x = 0.2 or 0.25) was then transferred onto an oxidized Si handle wafer by bonding and wafer splitting using hydrogen implantation. The resulting relaxed SGOI structures were characterized by transmission electron microscopy (TEM) and atomic force microscopy (AFM).

引用

页码：L37 / L39

页数：3

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