GaN-based light-emitting diodes and laser diodes, and their recent progress

被引：0

作者：

Nagahama, S ^{[1
]}

Iwasa, N ^{[1
]}

Senoh, M ^{[1
]}

Matsushita, T ^{[1
]}

Sugimoto, Y ^{[1
]}

Kiyoku, H ^{[1
]}

Kozaki, T ^{[1
]}

Sano, M ^{[1
]}

Matsumura, H ^{[1
]}

Umemoto, H ^{[1
]}

Chocho, K ^{[1
]}

Yanamoto, T ^{[1
]}

Mukai, T ^{[1
]}

机构：

[1] Nichia Corp, Nitride Semicond Res Lab, Tokushima 7748601, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2001年 / 188卷 / 01期

关键词：

D O I：

10.1002/1521-396X(200111)188:1<1::AID-PSSA1>3.0.CO;2-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is recognized that GaN-based semiconductor is the most excellent material for short wavelength emitting devices. In this paper, we review the development of InGaN light emitting diodes (LEDs) and laser diodes (LDs). Additionally, purely-blue LDs are demonstrated, and the emission-wavelength dependence of the threshold current density is studied.

引用

页码：1 / 7

页数：7

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