Pad Wear Analysis during Interlayer Dielectric Chemical Mechanical Planarization

被引：1

作者：

Jiao, Yubo ^{[1
]}

Zhuang, Yun ^{[1
,2
]}

Wei, Xiaomin ^{[1
]}

Sampurno, Yasa ^{[1
,2
]}

Meled, Anand ^{[1
]}

Theng, Siannie ^{[2
]}

Cheng, Jiang ^{[1
]}

Hooper, Don ^{[3
]}

Moinpour, Mansour ^{[4
]}

Philipossian, Ara ^{[1
,2
]}

机构：

[1] Univ Arizona, Dept Chem & Environm Engn, Tucson, AZ 85721 USA

[2] Araca Inc, Tucson, AZ 85718 USA

[3] Intel Corp, Rio Rancho, NM 87124 USA

[4] Intel Corp, Santa Clara, CA 95054 USA

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2012年 / 1卷 / 05期

关键词：

D O I：

10.1149/2.022205jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, pad wear during interlayer dielectric (ILD) chemical mechanical planarization (CMP) was investigated using retaining rings with differentmaterials and slot designs as well as pads with differentmaterials at different platen temperatures. Results showed that the retaining ring slot design did not significantly affect the pad wear rate. On the other hand, the polyether ether ketone (PEEK) retaining ring exhibited a significantly lower pad wear rate (by 31%) than the polyphenylene sulfide (PPS) retaining ring. At both platen temperatures (25 and 50 degrees C), the thermoplastic D100 pad exhibited lower pad wear rates than the thermoset IC1000 pad. (C) 2012 The Electrochemical Society. All rights reserved.

引用

页码：N103 / N105

页数：3

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