Magnetization reversal behavior in Cobalt Rare-Earth thin films

被引：22

作者：

Malhotra, SS ^{[1
]}

Shan, ZS ^{[1
]}

Stafford, DC ^{[1
]}

Liou, SH ^{[1
]}

Sellmyer, DJ ^{[1
]}

机构：

[1] UNIV NEBRASKA,CTR MAT RES & ANAL,LINCOLN,NE 68588

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1996年 / 32卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/20.539251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cobalt Rare-Earth (CoR, R = Pr,Sm) thin films on a Cr underlayer have shown promise as future ultra high density magnetic recording media. The activation volume or the magnetic switching volume (V*) is an important consideration for thermal stability and media noise in high density recording media and V* can also provide information about the magnetization reversal behavior in these films. The magnetic switching volume was estimated for the CoPr films with thicknesses from 28 to 639 nm with a Cr underlayer of 80 nm annealed at 500 degrees C. The measured switching volume ranges from 1.3 to 1.7x10(-18) cm(3). We have also studied the Cr underlayer thickness and temperature effects on the switching volume for the CoSm films.

引用

页码：4019 / 4021

页数：3

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