In situ Raman spectroscopy of topological insulator Bi2Te3 films with varying thickness

被引：77
|
作者：
Wang, Chunxiao [1 ,2 ]
Zhu, Xiegang [1 ]
Nilsson, Louis [3 ,4 ]
Wen, Jing [1 ]
Wang, Guang [1 ]
Shan, Xinyan [1 ]
Zhang, Qing [1 ]
Zhang, Shulin [2 ]
Jia, Jinfeng [1 ,5 ]
Xue, Qikun [1 ]
机构：
[1] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[2] Peking Univ, Dept Phys, Beijing 100871, Peoples R China
[3] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, Denmark
[4] Aarhus Univ, Interdisciplinary Nanosci Ctr, DK-8000 Aarhus C, Denmark
[5] Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200240, Peoples R China
来源：
NANO RESEARCH | 2013年 / 6卷 / 09期
基金：
中国国家自然科学基金;
关键词：
topological insulator; in situ Raman spectroscopy; surface phonon mode; thin film; THIN-FILMS; BI2SE3; SB2TE3;
D O I：
10.1007/s12274-013-0344-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Topological insulators (TIs) are a new state of quantum matter with a band gap in bulk and conducting surface states. In this work, the Raman spectra of topological insulator Bi2Te3 films prepared by molecular beam epitaxy (MBE) have been measured by an in situ ultrahigh vacuum (UHV)-MBE-Raman spectroscopy system. When the thickness of Bi2Te3 films decreases from 40 quintuple-layers (QL) to 1 QL, the spectral characteristics of some Raman modes appearing in bulk Bi2Te3 vary and a new vibrational mode appears, which has not been reported in previous studies and might be related to quantum size effects and symmetry breaking. In addition, an obvious change was observed at 3 QL when a Dirac cone formed. These results offer some new information about the novel quantum states of TIs.
引用
收藏
页码：688 / 692
页数：5
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