Self-assembled GaIn(N)As quantum dots:: Enhanced luminescence at 1.3 μm

被引：16
|
作者：
Hakkarainen, T [1 ]
Toivonen, J [1 ]
Sopanen, M [1 ]
Lipsanen, H [1 ]
机构：
[1] Helsinki Univ Technol, Optoelect Labs, FIN-02015 Espoo, Finland
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 24期
关键词：
D O I：
10.1063/1.1425082
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Self-assembled GaIn(N)As quantum dots are fabricated on GaAs by atmospheric pressure metalorganic vapor-phase epitaxy using dimethylhydrazine (DMHy) precursor as a nitrogen source. The incorporation of nitrogen into the islands is observed to be negligible. However, the areal density of the islands is increased by up to one order of magnitude compared to that of the respective GaInAs islands. The GaIn(N)As island size can also be controlled by varying the DMHy flow. An enhancement of the room-temperature luminescence at 1.3 mum is observed in the GaIn(N)As samples grown with DMHy. (C) 2001 American Institute of Physics.
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收藏
页码：3932 / 3934
页数：3
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