Strain and composition in self-assembled SiGe islands by Raman spectroscopy

被引：28
|
作者：
Cazayous, M
Groenen, J
Demangeot, F
Sirvin, R
Caumont, M
Remmele, T
Albrecht, M
Christiansen, S
Becker, M
Strunk, HP
Wawra, H
机构：
[1] Univ Toulouse 3, Phys Solides Lab, UMR 5477, F-31062 Toulouse 4, France
[2] Univ Erlangen Nurnberg, Inst Werkstoffwissensch Mikrocharakterisierung, D-91058 Erlangen, Germany
[3] Inst Kristallzuchtung, D-12489 Berlin, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 10期
关键词：
D O I：
10.1063/1.1469200
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated self-assembled Si1-xGex islands grown on Si (001). We show that the average composition and both the epsilon(xx) and epsilon(zz) average strain components can be derived from Raman scattering spectra. Both nm-sized and mum-sized islands are investigated. The experimental results are compared successfully with finite-element strain simulations. Raman scattering is shown to be a versatile and reliable tool for investigating capped and uncapped islands. It is shown that strain profiles in mum-sized islands can be obtained by means of micro-Raman. (C) 2002 American Institute of Physics.
引用
收藏
页码：6772 / 6774
页数：3
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