Temperature dependence of time-resolved photoluminescence in mercuric iodide

被引:2
|
作者
Wen, XM [1 ]
Ohno, N
机构
[1] Yunnan Univ, Dept Phys, Kunming 650091, Peoples R China
[2] Osaka Electrocommun Univ, Acad Frontier Promot Ctr, Neyagawa, Osaka 5728530, Japan
关键词
mercuric iodide; photoluminescence; time-resolved; temperature dependence;
D O I
10.1143/JJAP.40.6464
中图分类号
O59 [应用物理学];
学科分类号
摘要
Time-resolved photoluminescence (TRPL) of red mercuric iodide single crystal was measured from 10 K to 110 K. Several near band-gap exciton lines were found in 530 nm and a broad band was found at 630 rim. At near band-gap region photoluminescence comprises fast and slow decay components. Free excitons convert into bound excitons much more efficiently than the bound into the free so that non-radiative decay becomes dominant. At 10 K the dominant decay of bound excitons was radiation. With increasing temperature non-radiative decay became gradually dominant so that luminescent intensity of bound exciton line decreased and lifetime shortened quickly, especially from 20 K to 30 K. The TRPL experiment revealed that 630 nm hand originates from the radiative recombination of donor-acceptor pairs. The central wavelength of the band shifted toward shorter wavelength with increasing temperature and the intensity decay can be depicted as t(-n(r)). The recombination rate of the donor-acceptor pairs is dependent of wavelength and temperature.
引用
收藏
页码:6464 / 6467
页数:4
相关论文
共 50 条
  • [1] Temperature dependence of time-resolved photoluminescence in mercuric iodide
    Matsuyama, Tetsuya
    Mukai, Masayasu
    Horinaka, Hiromichi
    Wada, Kenji
    Nakanishi, Tsutomu
    Okumi, Shoji
    Togawa, Kazuaki
    Nishitani, Tomohiro
    Baba, Toshio
    1600, Japan Society of Applied Physics (40):
  • [2] Time-resolved photoluminescence of red mercuric iodide
    Wen, XM
    Ohno, N
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (07) : 4095 - 4100
  • [3] Temperature and time-resolved dependence of photoluminescence in InGaN quantum dots
    Chen, Cheng
    Qiu, Zhi Ren
    Shu, Xiang Ping
    Li, Zeng Cheng
    Liu, Jian Ping
    Feng, Zhe Chuan
    ADVANCED ENGINEERING MATERIALS III, PTS 1-3, 2013, 750-752 : 927 - +
  • [4] Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring
    Lin, C. H.
    Lin, H. S.
    Huang, C. C.
    Su, S. K.
    Lin, S. D.
    Sun, K. W.
    Lee, C. P.
    Liu, Y. K.
    Yang, M. D.
    Shen, J. L.
    APPLIED PHYSICS LETTERS, 2009, 94 (18)
  • [5] Temperature dependence of time-resolved photoluminescence of bound excitons in CuInS2 crystals
    Wakita, K
    Nishi, K
    Ohta, Y
    Onishi, T
    THIN SOLID FILMS, 2005, 480 : 283 - 285
  • [6] Temperature dependence of time-resolved photoluminescence in closely packed alignment of Si nanodisks with SiC barriers
    Takayuki Kiba
    Yoshiya Mizushima
    Makoto Igarashi
    Chi-Hsien Huang
    Seiji Samukawa
    Akihiro Murayama
    Nanoscale Research Letters, 8
  • [7] Temperature dependence of time-resolved photoluminescence in closely packed alignment of Si nanodisks with SiC barriers
    Kiba, Takayuki
    Mizushima, Yoshiya
    Igarashi, Makoto
    Huang, Chi-Hsien
    Samukawa, Seiji
    Murayama, Akihiro
    NANOSCALE RESEARCH LETTERS, 2013, 8 : 1 - 7
  • [8] TEMPERATURE-DEPENDENCE OF THE TIME-RESOLVED EMISSIONS OF CSITL
    PASQUALE, F
    ROBERTO, L
    PAOLO, PG
    ANEDIO, R
    LUCA, S
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1991, 119 : 307 - 312
  • [9] Temperature dependence of steady and time-resolved photoluminescence in Si quantum dots/SiO2 superlattices
    Yu, Wei
    Feng, Huina
    Wang, Jin
    Dai, Wanlei
    Yu, Xiang
    Zhang, Jiawei
    Lai, Weidong
    Fu, Guangsheng
    PHYSICA B-CONDENSED MATTER, 2014, 434 : 177 - 180
  • [10] Temperature-dependent photoluminescence and time-resolved photoluminescence study of monolayer molybdenum disulfide
    Li, H.
    Zhang, X. H.
    OPTICAL MATERIALS, 2020, 107