Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring

被引：23

作者：

Lin, C. H. ^{[1
,2
,3
]}

Lin, H. S. ^{[2
,3
]}

Huang, C. C. ^{[1
]}

Su, S. K. ^{[2
,3
]}

Lin, S. D. ^{[2
,3
]}

Sun, K. W. ^{[1
]}

Lee, C. P. ^{[2
,3
]}

Liu, Y. K. ^{[4
]}

Yang, M. D. ^{[4
]}

Shen, J. L. ^{[4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Appl Chem, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Inst Elect Engn, Hsinchu 30010, Taiwan

[4] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 18期

关键词：

dark states; excitons; gallium arsenide; III-V semiconductors; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; time resolved spectra; EXCITONS;

D O I：

10.1063/1.3130741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present detailed experimental results of the temperature dependence of continuous wave and time-resolved photoluminescence (PL) spectroscopy in self-assembled InAs/GaAs quantum dot and quantum ring nanostructures. A dramatic increase in PL decay time of the excited and ground states is observed in InAs quantum rings at high temperature. We speculate that the longer PL lifetime in quantum rings is due to the interplay among the dark states, ground states, and the reduced wave function overlapping between electrons and holes. A rate equation model is proposed to interpret the observed temperature dependence of the ground state exciton lifetime.

引用

页数：3

共 50 条

[1] Time-resolved photoluminescence of InAs quantum dots in a GaAs quantum well
Pulizzi, F
Kent, AJ
Patanè, A
Eaves, L
Henini, M
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (16) : 3046 - 3048
[2] Temperature and time-resolved dependence of photoluminescence in InGaN quantum dots
Chen, Cheng
Qiu, Zhi Ren
Shu, Xiang Ping
Li, Zeng Cheng
Liu, Jian Ping
Feng, Zhe Chuan
[J]. ADVANCED ENGINEERING MATERIALS III, PTS 1-3, 2013, 750-752 : 927 - +
[3] Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
Kong, LM
Cai, JF
Wu, ZY
Gong, Z
Niu, ZC
Feng, ZC
[J]. THIN SOLID FILMS, 2006, 498 (1-2) : 188 - 192
[4] Photoluminescence and time-resolved photoluminescence studies of lateral carriers transfer among InAs/GaAs quantum dots
Zaaboub, Z.
Hassen, F.
Naffouti, M.
Marie, X.
M'ghaieth, R.
Maaref, H.
[J]. OPTICAL AND QUANTUM ELECTRONICS, 2017, 49 (04)
[5] Photoluminescence and time-resolved photoluminescence studies of lateral carriers transfer among InAs/GaAs quantum dots
Z. Zaaboub
F. Hassen
M. Naffouti
X. Marie
R. M’ghaieth
H. Maaref
[J]. Optical and Quantum Electronics, 2017, 49
[6] Time-resolved reflectivity of low temperature grown InAs/GaAs quantum dots
Sreenivasan, Dilna
Haverkort, Jos
Zhan, Huahan
Eijkemans, Tom
Notzel, Richard
[J]. NANOPHOTONICS-USA, 2006, 6195
[7] TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY OF GAAS QUANTUM-WELL TUNNELING STRUCTURES
NORRIS, TB
MOUROU, GA
SONG, XJ
EASTMAN, LF
VODJDANI, N
VINTER, B
WEISBUCH, C
[J]. SURFACE SCIENCE, 1990, 228 (1-3) : 393 - 398
[8] Time-resolved temperature-dependent photoluminescence spectroscopy of InGaAs/GaAs quantum well-dots
Ivanov, Konstantin A.
Nadtochiy, Alexey M.
V. Kryzhanovskaya, Natalia
Mintairov, Sergey A.
Kalyuzhnyy, Nikolay A.
Melnichenko, Ivan A.
V. Maximov, Mikhail
Zhukov, Alexey E.
[J]. JOURNAL OF LUMINESCENCE, 2023, 255
[9] Time-resolved capacitance spectroscopy of hole and electron levels in InAs/GaAs quantum dots
Kapteyn, CMA
Lion, M
Heitz, R
Bimberg, D
Brunkov, P
Volovik, B
Konnikov, SG
Kovsh, AR
Ustinov, VM
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 224 (01): : 57 - 60
[10] Time-resolved photoluminescence spectroscopy of InAs quantum dots on InP with various InAlGaAs barrier thicknesses
Yoon, JJ
Jung, SI
Park, HJ
Suh, HK
Jeon, MH
Leem, JY
Cho, ET
Lee, JI
Cho, HK
Mo, YG
Kim, JS
Son, JS
Hang, IK
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 26 (1-4): : 207 - 211

← 1 2 3 4 5 →