High-Q MOS-Varactor Modeling for mm-Wave VCOs

被引：0
|
作者：
Itano, Yuka [1 ]
Itoh, Nobuyuki [1 ]
Yoshitomi, Sadayuki
Hoshino, Hiroaki
机构：
[1] Okayama Prefectural Univ, Grad Sch Comp Sci & Syst Engn, Soja, Japan
来源：
2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012) | 2012年
关键词：
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
High-Q and scalable MOS varactor for mm-wave VCO has been studied. To realize high-Q varactor in mm-wave region, low varactor capacitance and low series resistance of unit cell are essential. Since low varactor capacitance and low series resistance are impossible to realize simultaneously, optimization and scalable model are necessary. This paper presents strategy of high-Q optimization, a novel scalable model for mm-wave varactor, and confirmation results by VCO measurements. The Q of small-geometry varactor improved 30 times at f = 30 GHz. The novel scalable varactor model improved its accuracy from 21.9% to 1.7%.
引用
收藏
页码：202 / 204
页数：3
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