Development, performance and application of novel GaN-based micro-LED arrays with individually addressable n-electrodes

被引：0

作者：

Xie, Enyuan ^{[1
]}

Stonehouse, Mark ^{[1
]}

Ferreira, Ricardo ^{[1
]}

McKendry, Jonathan J. D. ^{[1
]}

Herrnsdorf, Johannes ^{[1
]}

He, Xiangyu ^{[1
]}

Rajbhandari, Sujan ^{[2
]}

Chun, Hyunchae ^{[2
]}

Jalajakumari, Aravind V. N. ^{[3
]}

Almer, Oscar ^{[3
]}

Videv, Stefan ^{[4
]}

Faulkner, Grahame ^{[2
]}

Watson, Ian M. ^{[1
]}

Gu, Erdan ^{[1
]}

Henderson, Robert ^{[3
]}

O'Brien, Dominic ^{[2
]}

Haas, Harald ^{[4
]}

Dawson, Martin D. ^{[1
]}

机构：

[1] Univ Strathclyde, Inst Photon, Dept Phys, Glasgow G1 1RD, Lanark, Scotland

[2] Univ Oxford, Dept Engn Sci, Oxford OX1 3PJ, England

[3] Univ Edinburgh, CMOS Sensors & Syst Grp, Edinburgh EH9 3JL, Midlothian, Scotland

[4] Univ Edinburgh, Li Fi R&D Ctr, Inst Digital Commun, Kings Bldg, Edinburgh EH9 3JL, Midlothian, Scotland

来源：

30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC) | 2017年

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate the development, performance and application of a GaN-based micro-light emitting diode array sharing a common p-electrode with individual-addressed n-electrodes. These individually-addressed n-electrodes minimize the series-resistance difference from conductive paths, and offer compatibility with n-type metal-oxide-semiconductor transistor-based drivers for faster modulation.

引用

页码：70 / 71

页数：2

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