Development, performance and application of novel GaN-based micro-LED arrays with individually addressable n-electrodes

被引：0
|
作者：
Xie, Enyuan [1 ]
Stonehouse, Mark [1 ]
Ferreira, Ricardo [1 ]
McKendry, Jonathan J. D. [1 ]
Herrnsdorf, Johannes [1 ]
He, Xiangyu [1 ]
Rajbhandari, Sujan [2 ]
Chun, Hyunchae [2 ]
Jalajakumari, Aravind V. N. [3 ]
Almer, Oscar [3 ]
Videv, Stefan [4 ]
Faulkner, Grahame [2 ]
Watson, Ian M. [1 ]
Gu, Erdan [1 ]
Henderson, Robert [3 ]
O'Brien, Dominic [2 ]
Haas, Harald [4 ]
Dawson, Martin D. [1 ]
机构：
[1] Univ Strathclyde, Inst Photon, Dept Phys, Glasgow G1 1RD, Lanark, Scotland
[2] Univ Oxford, Dept Engn Sci, Oxford OX1 3PJ, England
[3] Univ Edinburgh, CMOS Sensors & Syst Grp, Edinburgh EH9 3JL, Midlothian, Scotland
[4] Univ Edinburgh, Li Fi R&D Ctr, Inst Digital Commun, Kings Bldg, Edinburgh EH9 3JL, Midlothian, Scotland
来源：
30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC) | 2017年
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate the development, performance and application of a GaN-based micro-light emitting diode array sharing a common p-electrode with individual-addressed n-electrodes. These individually-addressed n-electrodes minimize the series-resistance difference from conductive paths, and offer compatibility with n-type metal-oxide-semiconductor transistor-based drivers for faster modulation.
引用
收藏
页码：70 / 71
页数：2
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