A Wideband Distributed Amplifier Employing an Envelope Tracking Technique

被引：2
|
作者：
Kam, Sang-Ho [1 ]
Kwon, Oh-Seung [1 ]
Jeong, Yoon-Ha [2 ,3 ,4 ,5 ,6 ]
机构：
[1] Pohang Univ Sci & Technol, Dept Elect Engn, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol, Dept Elect Engn, Pohang 790784, South Korea
[3] Pohang Univ Sci & Technol, Div IT Convergence Engn, Pohang 790784, South Korea
[4] Pohang Univ Sci & Technol, Dept Creat IT Excellence Engn, Pohang 790784, South Korea
[5] Pohang Univ Sci & Technol, Future IT Innovat Lab, Pohang 790784, South Korea
[6] Pohang Univ Sci & Technol, Natl Ctr Nanomat Technol, Pohang 790784, South Korea
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2013年 / 23卷 / 06期
关键词：
Adjacent channel leakage ratio (ACLR); distributed amplifier; Doherty amplifier; efficiency; envelope tracking (ET); long term evolution (LTE); POWER-AMPLIFIERS; DOHERTY AMPLIFIER; HIGH-EFFICIENCY; TRANSFORMER;
D O I：
10.1109/LMWC.2013.2257999
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents a wideband distributed amplifier employing an envelope tracking (ET) technique for high efficiency and linearity. By applying the ET technique to the distributed amplifier after linearity optimization, the distributed amplifier's defects such as low output power and low efficiency can be overcome and high efficiency and linearity can be achieved. For verification, the distributed amplifier is designed using two Nitronex NPTB00025 GaN HEMT devices and tested with LTE signals at 2.6 GHz. From the tested results at an average output power of 37 dBm (10 dB back-off power), the proposed circuit shows an adjacent channel leakage ratio (ACLR) below -45 dBc at +/-5 MHz offset, with a gain over 14.1 dB and a power-added efficiency (PAE) over 21.9% over a 300 MHz bandwidth.
引用
收藏
页码：312 / 314
页数：3
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