Nanostructural formation of self-assembled monolayer films on cleaved AlGaAs/GaAs heterojunctions

被引：0
|
作者：
Ohno, H [1 ]
Nagahara, LA [1 ]
Gwo, S [1 ]
Mizutani, W [1 ]
Tokumoto, H [1 ]
机构：
[1] NATL INST ADV INTERDISCIPLINARY RES,JOINT RES CTR ATOM TECHNOL,TSUKUBA,IBARAKI 305,JAPAN
来源：
MOLECULAR CRYSTALS AND LIQUID CRYSTALS SCIENCE AND TECHNOLOGY SECTION A-MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 1997年 / 294卷
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D O I：
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中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have demonstrated that nanostructures of self-assembled monolayer (NSAM) films of alkanethiols can be formed on the GaAs surface of a AlGaAs/GaAs heterojunctions by cleaving the substrates in an octadecylthiol solution diluted with ethanol. NSAMs with line width as narrow as 5 nm were observed by phase imaging using tapping mode cross-sectional atomic force microscopy (TMXAFM). Time dependent observation of the surface in ail revealed that the nanostructual formation occurred as a results of both selective chemisorption of alkanethiol on GaAs surfaces and the oxidation of AlGaAs surface.
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页码：487 / 490
页数：4
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