Nanostructural formation of self-assembled monolayer films on cleaved AlGaAs/GaAs heterojunctions

被引：0

作者：

Ohno, H ^{[1
]}

Nagahara, LA ^{[1
]}

Gwo, S ^{[1
]}

Mizutani, W ^{[1
]}

Tokumoto, H ^{[1
]}

机构：

[1] NATL INST ADV INTERDISCIPLINARY RES,JOINT RES CTR ATOM TECHNOL,TSUKUBA,IBARAKI 305,JAPAN

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS SCIENCE AND TECHNOLOGY SECTION A-MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 1997年 / 294卷

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have demonstrated that nanostructures of self-assembled monolayer (NSAM) films of alkanethiols can be formed on the GaAs surface of a AlGaAs/GaAs heterojunctions by cleaving the substrates in an octadecylthiol solution diluted with ethanol. NSAMs with line width as narrow as 5 nm were observed by phase imaging using tapping mode cross-sectional atomic force microscopy (TMXAFM). Time dependent observation of the surface in ail revealed that the nanostructual formation occurred as a results of both selective chemisorption of alkanethiol on GaAs surfaces and the oxidation of AlGaAs surface.

引用

页码：487 / 490

页数：4

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