High nonlinear figure-of-merit amorphous silicon waveguides

被引：44

作者：

Matres, J. ^{[1
]}

Ballesteros, G. C. ^{[1
]}

Gautier, P. ^{[2
]}

Fedeli, J-M ^{[2
]}

Marti, J. ^{[1
]}

Oton, C. J. ^{[1
]}

机构：

[1] Univ Politecn Valencia, Nanophoton Technol Ctr, Valencia 46022, Spain

[2] CEA LETI, F-38054 Grenoble, France

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 04期

关键词：

SEMICONDUCTOR; ABSORPTION; SIGNAL; GAIN;

D O I：

10.1364/OE.21.003932

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The nonlinear response of amorphous silicon waveguides is reported and compared to silicon-on-insulator (SOI) samples. The real part of the nonlinear coefficient gamma is measured by four-wave-mixing and the imaginary part of gamma is characterized by measuring the nonlinear loss at different peak powers. The combination of both results yields a two-photon-absorption figure of merit of 4.9, which is more than 7 times higher than for the SOI samples. Time-resolved measurements and simulations confirm the measured nonlinear coefficient gamma and show the absence of slow free-carrier effects versus ns free-carrier lifetimes in the SOI samples. (C) 2012 Optical Society of America

引用

页码：3932 / 3940

页数：9

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