Study of structure changes on the Si surfaces using reflection high-energy electron diffraction

被引：3

作者：

Shigeta, Y ^{[1
]}

Fukaya, Y

机构：

[1] Yokohama City Univ, Fac Sci, Kanazawa Ku, Yokohama, Kanagawa 2360027, Japan

[2] Yokohama City Univ, Grad Sch Integrated Sci, Kanazawa Ku, Yokohama, Kanagawa 2360027, Japan

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2004年 / 18卷 / 03期

基金：

日本学术振兴会;

关键词：

reflection high-energy electron diffraction (RHEED); phase transition; thermal diffuse scattering; silicon surface;

D O I：

10.1142/S021797920402388X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to investigate surface structure change due to phase transition, surface melting, surface segregation and thin film growth, we have developed a new system for reflection high-energy electron diffraction (RHEED) with two pairs of magnetic coils to measure rocking curves in short time. This system is the most suitable tool to determine the structure change with temperature in a wide range, and we studied the dynamical structure change during film growth of Si on Si(111) and the phase transitions of Si(111) and Si(100) surfaces at high temperature.

引用

页码：289 / 316

页数：28

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