Core-level photoemission study of 2D ordered Bi/Si(100) interfaces

被引：7
|
作者：
Corradini, V
Gavioli, L
Mariani, C
机构：
[1] Univ Modena, Dipartimento Fis, Ist Nazl Fis Mat, I-41100 Modena, Italy
[2] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
来源：
SURFACE SCIENCE | 1999年 / 430卷 / 1-3期
关键词：
bismuth; metal-semiconductor interfaces; silicon; surface relaxation and reconstruction synchrotron radiation photoelectron spectroscopy;
D O I：
10.1016/S0039-6028(99)00426-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A high resolution fore-level photoemission investigation of 2D ordered Bi layers grown on Si(100)-(2 x 1) is presented. We study the Si 2p and Bi 5d core-levels at room temperature as a function of coverage and in the reconstructed phases. The different Bi structural configurations around the monolayer coverage and in the (2 x n)-reconstructed phase are derived from the core-level lineshape evolution. By following the Fermi level pinning, the presence of Bi-induced occupied electronic states close to the Si mid-gap is suggested. (C) 1999 Elsevier Science B.V. All rights reserved.
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页码：126 / 136
页数：11
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