Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors

被引：1
|
作者：
Ng, C. W. [1 ]
Wang, H. [1 ,2 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, NOVITAS, Nanoelect Ctr Excellence, Singapore 669798, Singapore
[2] CINTRA CNRS NTU THALES, UMI 3288, Singapore 637553, Singapore
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2012年 / 209卷 / 08期
关键词：
energy band; heterojunction bipolar transistors; InAlAs; GaAsSb; MOLECULAR-BEAM EPITAXY; DHBTS; HBTS; GHZ;
D O I：
10.1002/pssa.201127699
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, the temperature-dependent DC performance of InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an InP/InAlAs composite emitter was characterized. The current transport mechanisms in DHBTs with a type-I InAlAs/GaAsSb emitterbase junction interface and a type-II GaAsSb/InP basecollector were studied. The experimental results reveal that electron injection at emitterbase junction could be affected by conduction barrier limited carrier transport. A conduction band edge discontinuity of 9.5?meV for InAlAs/GaAsSb heterojunction was experimentally estimated.
引用
收藏
页码：1579 / 1582
页数：4
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