Band insulator to Mott insulator transition in 1T-TaS2

被引:132
|
作者
Wang, Y. D. [1 ]
Yao, W. L. [1 ]
Xin, Z. M. [1 ]
Han, T. T. [1 ]
Wang, Z. G. [1 ]
Chen, L. [1 ]
Cai, C. [1 ]
Li, Yuan [1 ,2 ]
Zhang, Y. [1 ,2 ]
机构
[1] Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
CHARGE-DENSITY WAVES; PHASE-TRANSITIONS;
D O I
10.1038/s41467-020-18040-4
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
1T-TaS2 undergoes successive phase transitions upon cooling and eventually enters an insulating state of mysterious origin. Some consider this state to be a band insulator with interlayer stacking order, yet others attribute it to Mott physics that support a quantum spin liquid state. Here, we determine the electronic and structural properties of 1T-TaS2 using angle-resolved photoemission spectroscopy and X-Ray diffraction. At low temperatures, the 2/2c-periodic band dispersion, along with half-integer-indexed diffraction peaks along the c axis, unambiguously indicates that the ground state of 1T-TaS2 is a band insulator with interlayer dimerization. Upon heating, however, the system undergoes a transition into a Mott insulating state, which only exists in a narrow temperature window. Our results refute the idea of searching for quantum magnetism in 1T-TaS2 only at low temperatures, and highlight the competition between on-site Coulomb repulsion and interlayer hopping as a crucial aspect for understanding the material's electronic properties. 1T-TaS2 possesses complex electronic phase behaviors in transition-metal di-chalcogenides, undergoing several charge-ordered phases before finally into an insulating state of unknown origin. Here, the authors determine its electronic and structural properties experimentally, revealing its origin.
引用
收藏
页数:7
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