Characterization of the ultra thin films of silicon oxynitride deposited by plasma-assisted N2O oxidation for thin film transistors

被引：0

作者：

Hwang, Sunghyun ^{[1
]}

Jung, Sungwook ^{[1
]}

Kim, Hyunmin ^{[1
]}

Kim, Junsik ^{[1
]}

Jang, Kyung-Soo ^{[1
]}

Lee, Jeoungin ^{[1
]}

Lee, Kwangsoo ^{[1
]}

Jung, Wonjune ^{[1
]}

Dhungel, S. K. ^{[1
]}

Ghosh, S. N. ^{[1
]}

Yi, J. ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon, Kyunggi Do, South Korea

来源：

IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sealing rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using N2O in Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) is investigated using X-ray energy dispersive spectroscopy (EDS). We have reported about Ellipsometric measurement, Capacitance - Voltage characterisation and processing conditions.

引用

页码：1462 / 1464

页数：3

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