Vibrational spectroscopy characterization of magnetron sputtered silicon oxide and silicon oxynitride films

被引:12
|
作者
Godinho, V. [1 ,4 ]
Denisov, V. N. [2 ]
Mavrin, B. N. [2 ]
Novikova, N. N. [2 ]
Vinogradov, E. A. [2 ]
Yakovlev, V. A. [2 ]
Fernandez-Ramos, C. [1 ,3 ]
Jimenez de Haro, M. C. [1 ]
Fernandez, A. [1 ]
机构
[1] Inst Ciencia Mat Sevilla CSIC US, Seville 41092, Spain
[2] Russian Acad Sci, Inst Spect, Troitsk 142190, Moscow Reg, Russia
[3] JRC European Commiss, Inst Prospect & Technol Studies, Seville 41092, Spain
[4] Univ Libre Bruxelles, B-1050 Brussels, Belgium
关键词
Silicon oxide; Silicon oxynitride; Magnetron sputtering; Vibrational spectroscopy; Infrared; Raman; SIOXNY THIN-FILMS; OPTICAL-PROPERTIES; SI; POLARITONS; DEPOSITION;
D O I
10.1016/j.apsusc.2009.07.101
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Vibrational (infrared and Raman) spectroscopy has been used to characterize SiOxNy and SiOx films prepared by magnetron sputtering on steel and silicon substrates. Interference bands in the infrared reflectivity measurements provided the film thickness and the dielectric function of the films. Vibrational modes bands were obtained both from infrared and Raman spectra providing useful information on the bonding structure and the microstructure (formation of nano-voids in some coatings) for these amorphous (or nanocrystalline) coatings. X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) analysis have also been carried out to determine the composition and texture of the films, and to correlate these data with the vibrational spectroscopy studies. The angular dependence of the reflectivity spectra provides the dispersion of vibrational and interference polaritons modes, what allows to separate these two types of bands especially in the frequency regions where overlaps/resonances occurred. Finally the attenuated total reflection Fourier transform infrared measurements have been also carried out demonstrating the feasibility and high sensitivity of the technique. Comparison of the spectra of the SiOxNy films prepared in various conditions demonstrates how films can be prepared from pure silicon oxide to silicon oxynitride with reduced oxygen content. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:156 / 164
页数:9
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