Electrical properties of surface-barrier diodes based on CdZnTe

被引：10

作者：

Kosyachenko, LA ^{[1
]}

Rarenko, IM ^{[1
]}

Zakharchuk, ZI ^{[1
]}

Sklyarchuk, VM ^{[1
]}

Sklyarchuk, EF ^{[1
]}

Solonchuk, IV ^{[1
]}

Kabanova, IS ^{[1
]}

Maslyanchuk, EL ^{[1
]}

机构：

[1] Chernovtsy Natl Univ, UA-58012 Chernovtsy, Ukraine

来源：

SEMICONDUCTORS | 2003年 / 37卷 / 02期

关键词：

D O I：

10.1134/1.1548671

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Diode structures obtained by vacuum sputtering deposition of Al onto the surface of p-Cd1-xZnxTe (x=0.05) single crystals were studied. In the context of the Sah-Noyce-Shockley model for generation and recombination of charge carriers, a quantitative description of the diodes' electrical characteristics is attained. (C) 2003 MAIK "Nauka/Interperiodica".

引用

页码：227 / 232

页数：6

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