Electrical properties of surface-barrier diodes based on CdZnTe

被引：10
|
作者：
Kosyachenko, LA [1 ]
Rarenko, IM [1 ]
Zakharchuk, ZI [1 ]
Sklyarchuk, VM [1 ]
Sklyarchuk, EF [1 ]
Solonchuk, IV [1 ]
Kabanova, IS [1 ]
Maslyanchuk, EL [1 ]
机构：
[1] Chernovtsy Natl Univ, UA-58012 Chernovtsy, Ukraine
来源：
SEMICONDUCTORS | 2003年 / 37卷 / 02期
关键词：
D O I：
10.1134/1.1548671
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Diode structures obtained by vacuum sputtering deposition of Al onto the surface of p-Cd1-xZnxTe (x=0.05) single crystals were studied. In the context of the Sah-Noyce-Shockley model for generation and recombination of charge carriers, a quantitative description of the diodes' electrical characteristics is attained. (C) 2003 MAIK "Nauka/Interperiodica".
引用
收藏
页码：227 / 232
页数：6
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