Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory

被引：34

作者：

Grezes, Cecile ^{[1
]}

Lee, Hochul ^{[1
,2
]}

Lee, Albert ^{[1
,2
]}

Wang, Shaodi ^{[1
]}

Ebrahimi, Farbod ^{[2
]}

Li, Xiang ^{[1
]}

Wong, Kin ^{[1
]}

Katine, Jordan A. ^{[3
]}

Ocker, Berthold ^{[4
]}

Langer, Juergen ^{[4
]}

Gupta, Puneet ^{[1
]}

Amiri, Pedram Khalili ^{[1
,2
]}

Wang, Kang L. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Los Angeles, CA 90095 USA

[2] Inston Inc, Los Angeles, CA 90095 USA

[3] HGST Inc, San Jose, CA 95135 USA

[4] Singulus Technol AG, D-63796 Kahl Am Main, Germany

来源：

IEEE MAGNETICS LETTERS | 2017年 / 8卷

基金：

美国国家科学基金会;

关键词：

Spin electronics; magnetic tunnel junctions; electrical control of spin; magnetic random-access memory;

D O I：

10.1109/LMAG.2016.2630667

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report experimental results on write error rate and read disturbance as a function of read/write pulse width and amplitude in electric-field-controlled magnetic tunnel junctions (MTJs). Results are shown for 50 nm perpendicular MTJs. We also design and simulate the performance of a 256 kilobit (Kbit) magneto-electric random-access memory (MeRAM) macro in a 28 nm complementary metal-oxide semiconductor (CMOS) process, based on the measured MTJ device data. The results show that existing electric-field-controlled MTJs are capable of delivering write error rates below 10(-9) for 10 ns total write and verify time and read disturbance below 10(-16) for 2 ns read time in a 256 Kbit MeRAM array.

引用

页数：5

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