A Novel Variable-Gain Amplifier Based on an FGMOS Transistor

被引：0
|
作者：
Sharroush, Sherif M. [1 ]
机构：
[1] Port Said Univ, Fac Engn, Dept Elect Engn, Port Said, Egypt
来源：
2016 5TH INTERNATIONAL CONFERENCE ON ELECTRONIC DEVICES, SYSTEMS AND APPLICATIONS (ICEDSA) | 2016年
关键词：
CMOS technology; floating-gate transistor; variable-gain amplifier;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
In radio-frequency receivers, variable-gain amplifiers (VGAs) are often used in order to compensate for the change of the signal level during the channel transmission and to relax the constraints on the succeeding analog-to-digital converter (ADC). In this paper, a novel VGA is introduced using a floating-gate MOS transistor (FGMOS). The voltage gain, the linearity, the valid region for proper operation, and the sensitivity are discussed and quantitative expressions are derived for them. The performance of this amplifier is verified by simulation adopting the 45 nm CMOS technology with V-DD = 1 V.
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页数：4
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