Optical properties of m-plane GaN quantum dots and quantum wires

被引：20
|
作者：
Renard, Julien [1 ,3 ]
Amstatt, Benoit [1 ,2 ,3 ]
Bougerol, Catherine [1 ,3 ]
Bellet-Amalric, Edith [1 ,3 ]
Daudin, Bruno [1 ,3 ]
Gayral, Bruno [1 ,3 ]
机构：
[1] Univ Grenoble 1, CNRS, Inst Neel, CEA CNRS Grp, F-38054 Grenoble, France
[2] NOVASIC, Savoie Technolac, F-73375 Le Bourget Du Lac, France
[3] INAC SP2M, CEA Grenoble, F-38054 Grenoble, France
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 10期
关键词：
gallium compounds; III-V semiconductors; photoluminescence; quantum confined Stark effect; semiconductor quantum dots; semiconductor quantum wires; wide band gap semiconductors;
D O I：
10.1063/1.3021286
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the optical properties of m-plane GaN/AlN quantum dots and quantum wires. The photoluminescence, both on an ensemble of nanostructures and on single nanostructures, shows a strong degree of linear polarization perpendicular to the c-axis. Time-resolved photoluminescence evidences the strong reduction in the quantum confined Stark effect. Temperature dependence measurements suggest a difference in nonradiative processes between quantum dots and quantum wires.
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页数：4
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