Optical properties of m-plane GaN quantum dots and quantum wires

被引：20
|
作者：
Renard, Julien [1 ,3 ]
Amstatt, Benoit [1 ,2 ,3 ]
Bougerol, Catherine [1 ,3 ]
Bellet-Amalric, Edith [1 ,3 ]
Daudin, Bruno [1 ,3 ]
Gayral, Bruno [1 ,3 ]
机构：
[1] Univ Grenoble 1, CNRS, Inst Neel, CEA CNRS Grp, F-38054 Grenoble, France
[2] NOVASIC, Savoie Technolac, F-73375 Le Bourget Du Lac, France
[3] INAC SP2M, CEA Grenoble, F-38054 Grenoble, France
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 10期
关键词：
gallium compounds; III-V semiconductors; photoluminescence; quantum confined Stark effect; semiconductor quantum dots; semiconductor quantum wires; wide band gap semiconductors;
D O I：
10.1063/1.3021286
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the optical properties of m-plane GaN/AlN quantum dots and quantum wires. The photoluminescence, both on an ensemble of nanostructures and on single nanostructures, shows a strong degree of linear polarization perpendicular to the c-axis. Time-resolved photoluminescence evidences the strong reduction in the quantum confined Stark effect. Temperature dependence measurements suggest a difference in nonradiative processes between quantum dots and quantum wires.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Growth of m-plane GaN quantum wires and quantum dots on m-plane 6H-SiC
    Amstatt, B.
    Renard, J.
    Bougerol, C.
    Bellet-Amalric, E.
    Gayral, B.
    Daudin, B.
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)
  • [2] Structural and optical properties of m-plane GaN/AlGaN quantum wires grown by metalorganic chemical vapor deposition
    Yang, Xuelin
    Arita, Munetaka
    Kako, Satoshi
    Arakawa, Yasuhiko
    [J]. APPLIED PHYSICS LETTERS, 2011, 99 (11)
  • [3] Electronic and optical properties of a- and m-plane wurtzite InGaN-GaN quantum wells
    Park, Seoung-Hwan
    Ahn, Doyeol
    Chuang, Shun-Lien
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (11-12) : 1175 - 1182
  • [4] Quantum dot to quantum wire transition of m-plane GaN islands
    Amstatt, B.
    Renard, J.
    Bougerol, C.
    Bellet-Amalric, E.
    Gayral, B.
    Daudin, B.
    [J]. PHYSICAL REVIEW B, 2009, 79 (03)
  • [5] Optical polarization characteristics of m-plane GaN/AlGaN quantum well structures grown on m-plane SiC substrate
    Park, Seoung-Hwan
    Ahn, Doyeol
    [J]. SOLID STATE COMMUNICATIONS, 2015, 223 : 16 - 18
  • [6] A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
    Kundys, Dmytro
    Sutherland, Danny
    Davies, Matthew J.
    Oehler, Fabrice
    Griffiths, James
    Dawson, Philip
    Kappers, Menno J.
    Humphreys, Colin J.
    Schulz, Stefan
    Tang, Fengzai
    Oliver, Rachel A.
    [J]. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2016, 17 (01) : 736 - 743
  • [7] Optical properties and carrier dynamics in m-plane InGaN quantum wells
    Marcinkevicius, Saulius
    Kelchner, Kathryn M.
    Nakamura, Shuji
    DenBaars, Steven P.
    Speck, James S.
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, 2014, 11 (3-4): : 690 - 693
  • [8] Internal quantum efficiency of m-plane InGaN on Si and GaN
    Lee, J.
    Ni, X.
    Wu, M.
    Li, X.
    Shimada, R.
    Ozgur, U.
    Baski, A. A.
    Morkoc, H.
    Paskova, T.
    Mulholland, G.
    Evans, K. R.
    [J]. GALLIUM NITRIDE MATERIALS AND DEVICES V, 2010, 7602
  • [9] Optical properties of GaN quantum dots
    Ramvall, P
    Riblet, P
    Nomura, S
    Aoyagi, Y
    Tanaka, S
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (08) : 3883 - 3890
  • [10] M-Plane Core-Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices
    Koester, Robert
    Hwang, Jun-Seok
    Salomon, Damien
    Chen, Xiaojun
    Bougerol, Catherine
    Barnes, Jean-Paul
    Dang, Daniel Le Si
    Rigutti, Lorenzo
    Bugallo, Andres de Luna
    Jacopin, Gwenole
    Tchernycheva, Maria
    Durand, Christophe
    Eymery, Joel
    [J]. NANO LETTERS, 2011, 11 (11) : 4839 - 4845
12345