Photocurrent spectroscopy of a (0001)GaN/AlGaN/(111)Si heterostructure

被引：9
|
作者：
Kuroiwa, Y [1 ]
Honda, Y [1 ]
Sawaki, N [1 ]
机构：
[1] Nagoya Univ, Dept Elect, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 21卷 / 2-4期
关键词：
GaN; heterostructure; photocurrent spectroscopy; MOVPE;
D O I：
10.1016/j.physe.2003.11.125
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A crack-free GaN/AlGaN sample was grown on (111) Si by selective area metal-organic vapor-phase epitaxy method using an AlGaN intermediate layer. The electrical properties of the GaN/AlGaN/Si heterojunction diode were investigated with photocurrent spectroscopy at 77 K. It was found that the current-voltage characteristics depend on the thickness/composition of the intermediate layer. The photocurrent spectra indicated that the energy band of the n-type-doped Si substrate is lifted at the heterointerface, while it is flat in case of the sample grown on a p-type-doped Si. The depletion of the energy band in the n-Si at the heterointerface is attributed to the diffusion of Al during the growth. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：787 / 792
页数：6
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