Focused ion beam milling of exfoliated graphene for prototyping of electronic devices

被引：11
|
作者：
Schmidt, Marek E. [1 ]
Johari, Zaharah [1 ,2 ]
Ismail, Razali [2 ]
Mizuta, Hiroshi [1 ]
Chong, Harold M. H. [1 ]
机构：
[1] Univ Southampton, Sch Elect & Comp Sci, Nano Res Grp, Southampton SO17 1BJ, Hants, England
[2] Univ Teknol Malaysia, Dept Elect Engn, Johor Baharu 81310, Johor, Malaysia
来源：
MICROELECTRONIC ENGINEERING | 2012年 / 98卷
关键词：
Focused ion beam; FIB assisted deposition; Graphene; FIB milling; Prototyping; DEPOSITION;
D O I：
10.1016/j.mee.2012.07.090
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate a focused ion beam (FIB) prototyping technique that accurately aligns a two terminal contact structure to exfoliated graphene. Alignment accuracy of better than 250 nm has been achieved without direct FIB imaging of the graphene. In situ deposited tungsten is used to contact the graphene channel and the measured channel resistance is 58 k Omega. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：313 / 316
页数：4
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