I-V Characteristics of a Static Random Access Memory Cell Utilizing Ferroelectric Transistors

被引：1

作者：

Mccartney, Crystal Laws ^{[1
]}

Mitchell, Cody ^{[1
]}

Hunt, Mitchell ^{[1
]}

Macleod, Todd C. ^{[2
]}

Ho, Fat D. ^{[1
]}

机构：

[1] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA

[2] NASA, Natl Space Sci & Technol Ctr, Huntsville, AL 35812 USA

来源：

INTEGRATED FERROELECTRICS | 2012年 / 140卷

关键词：

SRAM; FeFET; MOSFET;

D O I：

10.1080/10584587.2012.741390

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Due to the unique properties of hysteresis and nonlinearity, the use of ferroelectric materials in memory devices is widely researched. This paper presents the current-voltage (I-V) characteristics of a FeFET in the Static Random Access Memory (SRAM) cell. Empirical data will be analyzed using a variety of setup configurations using both MOSFETs as well as FeFETS. The drain current was measured with different gate and drain voltages while polarizing the ferroelectric material. Based on the empirical data, comparisons were made between the different MOSFET and FeFET configurations.

引用

页码：35 / 41

页数：7

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