共 50 条
- [23] Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2153 - 2155
- [25] Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 2004, 151 (05): : 486 - 488