Cu induced step bunching on a Si(111) vicinal surface studied by reflection electron microscopy

被引：9
|
作者：
Takahashi, Y [1 ]
Minoda, H [1 ]
Tanishiro, Y [1 ]
Yagi, K [1 ]
机构：
[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan
来源：
SURFACE SCIENCE | 1999年 / 433卷
关键词：
Cu; Si(111); surface reconstruction; surface;
D O I：
10.1016/S0039-6028(99)00464-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Step bunching induced by Cu adsorption on a Si(111) vicinal surface was studied by reflection electron microscopy. A surface with a regular array of steps changes to wide (111) terraces and step bands due to the formation of the incommensurate (IC) Cu-adsorbed structure on the Si(111) terraces. The maximum terrace width of the IC domains depends on the deposition conditions of Cu, and is wider at higher temperature and at lower deposition rate. (441) and (331) facets are formed on a vicinal Si(111) surface inclined towards the [112] direction, while no facet with definite index is noticed on a vicinal surface inclined towards the [110] direction. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：512 / 516
页数：5
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