MOSFET Modeling based on Electromagnetic Interference (EMI)

On the basis of the lumped electric charge, the inner P type body region and the N-type drift region electric charge of VDMOSFET were respectively shown in three districts: accumulation, depletion, inversion. The application of carrier transport equation, continuity equation and Poisson equation, characterized different regions electric charge. According to the variation of the electric charge, the parasitic capacitance C-GD, C-GS and C-DS were determined, and the model parameters obtained by linear extrapolation and curve fitting. The MOSFET model was completed in MAST language. The results obtained experimentally with Boost circuit and by Saber software simulation confirm the accuracy of MOSFET model.