High-Frequency Piezoelectric-on-Si MEMS Resonator and Numerical Method for Parameter Extraction

被引:0
|
作者
Erbes, Andreja [1 ]
Prasad, Abhinav [1 ]
Seshia, Ashwin A. [1 ]
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1TN, England
基金
英国工程与自然科学研究理事会;
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the design and characterization of a piezoelectrically-transduced (AlN) on silicon micro-mechanical resonator operating in its lateral bulk acoustic width-extensional mode at 28.73 MHz. The equivalent m-BVD model of the resonator is extracted using a least-squares-error algorithm which is presented in this paper. We report a mechanical Q factor of 5970 and motional resistance R-x of 273 Omega in vacuum (p(0) = 30 mTorr) for the fundamental bulk acoustic mode for a 240 mu m x 149 mu m resonator. A good fit between the m-BVD model and the experimental data is obtained using the numerical fitting algorithm.
引用
收藏
页码:305 / 307
页数:3
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