Improved Thermal Stability of Indium Zinc Oxide TFTs by Low Temperature Post annealing

被引：0
|
作者：
Indluru, A. [1 ,2 ]
Alford, T. L. [1 ,2 ]
机构：
[1] Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA
[2] Arizona State Univ, Flexible Display Ctr, Tempe, AZ 85287 USA
来源：
THIN FILM TRANSISTORS 10 (TFT 10) | 2010年 / 33卷 / 05期
关键词：
D O I：
10.1149/1.3481256
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We report the effect of low temperature long anneals on the performance and elevated temperature stability of low temperature fabricated indium zinc oxide (IZO) thin film transistors (TFTs). We have found that there is an optimum annealing time of 48 hours for the best performance and elevated temperature stability. The 48 hour annealed TFTs showed a stable turn-on voltage, and sub-threshold swing with operation temperatures when compared to the as-fabricated TFTs. The performance/stability improvements are attributed to the reduction in trap-state-density at the semiconductor/insulator interface, and curing of the defects states in the band-gap of IZO.
引用
收藏
页码：337 / 344
页数：8
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