An EPR Study of Defects in Neutron-Irradiated Cubic SiC Crystals

被引：2
|
作者：
Bratus, V. [1 ]
Melnyk, R. [1 ]
Okulov, S. [1 ]
Shanina, B. [1 ]
Golub, V. [2 ]
Makeeva, I. [3 ]
机构：
[1] Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, Dept Opt & Spect, 45 Pr Nauky, UA-03680 Kiev, Ukraine
[2] Natl Acad Sci Ukraine, Inst Magnetism, Lab ESR Spect, UA-03680 Kiev, Ukraine
[3] Natl Acad Sci Ukraine, G Kurdyumov Inst Met Phys, Dept Atom Struct & Dynam Surface, UA-03680 Kiev, Ukraine
来源：
SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷
关键词：
EPR; Neutron Irradiation; Silicon Carbide; Radiation Defect; Defect Annealing; INTRINSIC DEFECTS; SILICON;
D O I：
10.4028/www.scientific.net/MSF.740-742.361
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
EPR spectroscopy has been used to characterize neutron-irradiated cubic SiC samples after thermal annealing in the 200-1100 degrees C temperature range. Three new paramagnetic defects named Ky6, Ky7 and Ky8 have been revealed. Based on the present results, these defects have been tentatively attributed to the negatively charged carbon vacancy-carbon antisite pair, negatively charged divacancy and neutral carbon < 100 > split interstitial, respectively. Furthermore, the finding of practically isotropic hyperfine splitting for EPR lines of the T6 center confirms its assignment as a carbon vacancy-interstitial pair.
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页码：361 / +
页数：2
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