Bias Polarity-Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer

被引：15
|
作者：
Huang, Jian-Shiou [1 ]
Lin, Yung-Chang [2 ]
Tsai, Hung-Wei [1 ]
Yen, Wen-Chun [1 ]
Chen, Chia-Wei [1 ]
Lee, Chi-Yuan [1 ]
Chin, Tsung-Shune [3 ]
Chueh, Yu-Lun [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki, Japan
[3] Feng Chia Univ, Dept Mat Sci & Engn, Taichung 40724, Taiwan
来源：
ADVANCED ELECTRONIC MATERIALS | 2015年 / 1卷 / 08期
关键词：
THIN-FILMS;
D O I：
10.1002/aelm.201500061
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
[No abstract available]
引用
收藏
页数：6
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